منابع مشابه
Tunnel-Diode Low-Level Detection
An analysis of tnmel-diode low-level detection is presented for the purpose of explaining some of the unusual detection characteristics that occur under certain hias conditions. For example, in the vicinity of its inflection hias point, a tmmel diode exhibits a discriminator-like rectification behavior with two sensitivity peaks. When biased at one of these peaks, the diode is capable of unusua...
متن کاملEffect of Low Frequency Low-Level Infra-Red Diode Laser Therapy on Third Degree Burn Healing in Rats Skin
Purpose: The aim of present investigation was to evaluate low frequency low-level infra red diode laser therapy for a third degree burn healing in rats skin.Materials and Methods: 36 rats were divided into groups one and two. On day zero three third degree burns were made on the dorsum of each rat by steam. In group one ,first burn were exposed to a 80 Hz –pulsed 890 nm infra red diode laser wi...
متن کاملEffect of Low Frequency Low-Level Infra-Red Diode Laser Therapy on Third Degree Burn Healing in Rats Skin
Purpose: The aim of present investigation was to evaluate low frequency low-level infra red diode laser therapy for a third degree burn healing in rats skin.Materials and Methods: 36 rats were divided into groups one and two. On day zero three third degree burns were made on the dorsum of each rat by steam. In group one ,first burn were exposed to a 80 Hz –pulsed 890 nm infra red diode laser wi...
متن کاملDemonstration of an amorphous carbon tunnel diode
Negative differential conductance in metal/amorphous nitrogenated carbon a-CNx /Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx /Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunnel...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques
سال: 1967
ISSN: 0018-9480
DOI: 10.1109/tmtt.1967.1126533